 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Preliminary data SPU30N03S2L-10 Feature N-Channel Logic Level Low on-resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ideal for fast switching applications Package P-TO251 Ordering Code Q67042-S4042 Marking 2N03L10 Type SPU30N03S2L-10 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TC=25C,1) TC=100C Pulsed drain current TC=25C Avalanche energy, single pulse ID =30 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =30A, VDS =24V, di/dt=200A/s, Tjmax =175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 OptiMOS Power-Transistor Product Summary VDS RDS(on) ID 30 10 30 P-TO251 V m A Symbol ID Value 30 30 Unit A ID puls EAS dv/dt VGS Ptot Tj , Tstg 120 150 6 20 82 -55... +175 55/175/56 mJ kV/s V W C Page 1 2002-02-11 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) SPU30N03S2L-10 Values min. typ. max. 1.8 100 75 50 K/W Unit Symbol RthJC RthJA RthJA - Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2 Values typ. 1,6 max. 2 Unit V Gate threshold voltage, VGS = VDS ID =50A Zero gate voltage drain current VDS =30V, VGS =0V, Tj=25C VDS =30V, VGS =0V, Tj=125C A 0.01 10 1 11.6 8.1 1 100 100 14.6 10 nA m Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=30A Drain-source on-state resistance VGS =10V, ID =30A 1Current limited by bondwire; with a R thJC = 1.8 K/W the chip is able to carry I D = 64A and calculated with max. source pin temperature of 85C. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-02-11 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics ID =30A SPU30N03S2L-10 Values min. typ. 47.5 1170 490 125 6.1 63 27 17 max. 1460 610 155 9.2 94 41 26 ns S pF Unit Symbol Conditions Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) tr td(off) tf VGS =0V, VDS =25V, f=1MHz VDD =15V, VGS=10V, ID =30A, RG =5.4 Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =30A VR =-V, IF=lS, diF /dt=100A/s Qgs Qgd Qg VDD =24V, ID =30A VDD =24V, ID =30A, VGS =0 to 10V V(plateau) VDD =24V, ID=30A IS ISM TC=25C Page 3 Transconductance gfs VDS 2*ID *RDS(on)max , 23.8 - - 3.8 10.8 31.5 3.4 4.3 16.2 39.4 - nC V - 0.9 25.5 26.5 30 120 1.2 38 40 A V ns nC 2002-02-11 Preliminary data 1 Power dissipation Ptot = f (TC ) 100 SPU30N03S2L-10 SPU30N03S2L-10 2 Drain current ID = f (TC ) parameter: VGS 10 V 32 SPU30N03S2L-10 W 80 A 24 70 Ptot 60 50 40 30 ID 20 16 12 8 20 10 0 0 4 20 40 60 80 100 120 140 160 C 190 0 0 20 40 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 C 10 3 SPU30N03S2L-10 4 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 1 SPU30N03S2L-10 K/W A 10 0 /I D tp = 7.9s 10 s ID V DS 10 2 n) Z thJC 10 -1 R DS (o = 100 s 10 10 1 1 ms 10 ms -2 single pulse 10 -3 DC 10 0 -1 10 10 -4 -7 10 10 0 10 1 V 10 2 10 -6 VDS Page 4 60 80 100 120 140 160 C 190 TC D = 0.50 0.20 0.10 0.05 0.02 0.01 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2002-02-11 Preliminary data 5 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 80 s 60 SPU30N03S2L-10 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 50 b A 50 45 40 edc m 40 a RDS(on) ID VGS[V]= a= 3.5 b= 4.0 c= 4.5 d= 5.0 e= 5.5 35 30 25 20 15 10 VGS[V]= a= 3.5 b= 4.0 c= 4.5 d= 5.0 e= 5.5 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 a b c d e 5 0 0 V 4.5 10 20 30 40 50 A 70 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 60 8 Typ. forward transconductance gfs = f(ID ); Tj=25C parameter: gfs 60 A 50 45 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 g fs V5 VGS ID 40 S 50 45 40 35 30 25 20 15 10 5 0 0 10 20 30 40 A ID 60 Page 5 2002-02-11 Preliminary data 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 30 A, VGS = 10 V 24 SPU30N03S2L-10 SPU30N03S2L-10 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 2.5 RDS(on) V GS(th) 11 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 pF 10 2 C Ciss 10 3 Coss IF 10 2 0 20 18 16 14 12 10 8 6 4 2 0 -60 -20 20 60 100 140 C V max 1.5 typ 98% 1 typ min 0.5 200 0 -60 -20 20 60 100 C Tj 180 Tj 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 3 SPU30N03S2L-10 A 10 1 Tj = 25 C typ Tj = 175 C typ Crss Tj = 25 C (98%) Tj = 175 C (98%) 5 10 15 20 V 30 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS VSD Page 6 2002-02-11 Preliminary data 13 Typ. avalanche energy EAS = f (Tj ) 160 SPU30N03S2L-10 14 Typ. gate charge VGS = f (QGate ) parameter: ID = 30 A pulsed 16 SPU30N03S2L-10 mJ 120 E AS 100 VGS 80 60 40 20 0 25 45 65 85 105 125 145 C 185 Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA 36 SPU30N03S2L-10 V V (BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C Tj Page 7 200 par.: ID = 30 A , VDD = 25 V, RGS = 25 V 12 10 0,2 VDS max 0,8 VDS max 8 6 4 2 0 0 5 10 15 20 25 30 35 40 nC 50 QGate 2002-02-11 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPU30N03S2L-10 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPU30N03S2L-10, for simplicity the device is referred to by the term SPU30N03S2L-10 throughout this documentation. Page 8 2002-02-11 |
Price & Availability of SPU30N03S2L-10
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |